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Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 160
Gain Bandwidth Product fT: 10 GHz
Emitter- Base Voltage VEBO: 1.5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 15 mA
Maximum DC Collector Current: 15 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 10 V
