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Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 1200
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 25 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 300 mA
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 42 mV
