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Detector Type: UV Enhanced Si/PIN
Wavelength Range: 190 - 1100 nm
Typical Maximum Responsivity: 0.5 A/W @ 960 nm
Active Detector Diameter: 4.1 mm
Bandwidth (3 dB): DC - 1 MHz
Common Mode Rejection Ratio: 30 dB (Typical)
Transimpedance Gain: High Z Load: 500 x 10^3 V/A 50 Ω Load: 175 x 10^3 V/A
Conversion Gain RF-Output: High Z Load: 250 x 10^3 V/W 50 Ω Load: 85 x 10^3 V/W
CW Saturation Power RF-Output: 36 µW @ 960 nm
Voltage Swing RF-Output: High Z Load: 10 V (Max) 50 Ω Load: 3.5 V (Max)
Conversion Gain Monitor Outputs: High Z Load: 10 V/mW 50 Ω Load: 1.5 V/mW @ 960 nm
Voltage Swing Monitor Outputs (Max): High Z Load: 10 V (Max) 50 Ω Load: 1.5 V (Max)
Minimum NEP: 3.6 pW/√Hz (DC - 1 MHz)
Optical Inputs: Free Space
Photodiode Damage Threshold: 20 mW
Electrical Outputs: BNC, 100 Ω
RF-Output Coupling: DC (AC-Coupling Available upon Request)
Operating Temperature Range(a): 0 to 40 °C
Storage Temperature Range: -40 to 70 °C
Dimensionsb (W x H x L): 83.8 mm x 65.3 mm x 21.1 mm (3.30" x 2.57" x 0.83")
Weight: 0.15 kg (w/o Power Supply)
Included Power Supply(c): ±12 V @ 250 mA (100/120/230 VAC, 50 - 60 Hz, Switchable)
(a) Non-Condensing
(b) Without Connectors
(c) A replacement power supply is available below.
(d) All technical data are valid at 23 ± 5°C and 45 ± 15% relative humidity (non-condensing).
