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Width: 4.4 mm
Height: 1.2 mm
Length: 5 mm
Fall Time: 5.5 ns
Rise Time: 5.5 ns
Technology: Si
Unit Weight: 62 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 11.25 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 710 mW
Vgs - Gate-Source Voltage: - 15 V, + 2 V
Typical Turn-On Delay Time: 6.5 ns
Typical Turn-Off Delay Time: 19 ns
Id - Continuous Drain Current: 2.18 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 4.3 S
Rds On - Drain-Source Resistance: 90 mOhms
Vds - Drain-Source Breakdown Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
