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Width: 3 mm
Height: 1.2 mm
Length: 4.4 mm
Fall Time: 10 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 39 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 5.45 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 504 mW
Vgs - Gate-Source Voltage: - 15 V, + 2 V
Typical Turn-On Delay Time: 4.5 ns
Typical Turn-Off Delay Time: 13 ns
Id - Continuous Drain Current: 1.27 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 2.5 S
Rds On - Drain-Source Resistance: 400 mOhms
Vds - Drain-Source Breakdown Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
