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Width: 2.5 mm
Height: 0.48 mm
Length: 5 mm
Fall Time: 5 ns, 6.3 ns
Rise Time: 31.6 ns, 36.7 ns
Technology: Si
Unit Weight: 54.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 3.2 nC, 13.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.3 ns, 12.1 ns
Typical Turn-Off Delay Time: 10.2 ns, 20.1 ns
Id - Continuous Drain Current: 25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 43 S, 93 S
Rds On - Drain-Source Resistance: 10.4 mOhms, 3.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
