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Width: 5 mm
Height: 1.5 mm
Length: 6 mm
Fall Time: 4.2 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 161.300 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 7.7 nC, 22 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 12 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 32 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV
