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Width: 1.74 mm
Height: 0.62 mm
Length: 2.32 mm
Fall Time: 2.9 ns
Rise Time: 4.3 ns
Technology: Si
Unit Weight: 4.100 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 3.1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Typical Turn-On Delay Time: 5.4 ns
Typical Turn-Off Delay Time: 13.2 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6.4 S
Rds On - Drain-Source Resistance: 42 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1 V
