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Fall Time: 5.2 ns, 46 ns
Rise Time: 25 ns ,38 ns
Technology: Si
Unit Weight: 28 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 16 nC, 21 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 4.2 W
Vgs - Gate-Source Voltage: - 20 V, + 25 V
Typical Turn-On Delay Time: 5.8 ns, 6.2 ns
Typical Turn-Off Delay Time: 22 ns, 50 ns
Id - Continuous Drain Current: 4.5 A, 5.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.4 S, 5.8 S
Rds On - Drain-Source Resistance: 17 mOhms, 33 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
