Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 200 ns, 4.3 us
Rise Time: 350 ns, 2.7 us
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: Through Hole
Transistor Type: 1 N-Channel OMNIFET Power MOSFET
Qg - Gate Charge: 100 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 40 W
Typical Turn-On Delay Time: 100 ns, 500 us
Typical Turn-Off Delay Time: 650 ns, 10 us
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 25 S
Rds On - Drain-Source Resistance: 28 mOhms
Vds - Drain-Source Breakdown Voltage: 70 V
Vgs th - Gate-Source Threshold Voltage: 3 V
