Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 1100 ns
Rise Time: 400 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 18 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Typical Turn-On Delay Time: 150 ns
Typical Turn-Off Delay Time: 3900 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 200 mOhms
Vds - Drain-Source Breakdown Voltage: 70 V
Vgs th - Gate-Source Threshold Voltage: 3 V
