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Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Id - Continuous Drain Current: 63 A
Rds On - Drain-Source Resistance: 41 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
