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Width: 15.75 mm
Height: 5.15 mm
Length: 20.15 mm
Fall Time: 12 ns
Rise Time: 60 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Qg - Gate Charge: 90 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 24 ns
Typical Turn-Off Delay Time: 130 ns
Id - Continuous Drain Current: 50 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 60 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
