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Width: 5.15 mm
Height: 20.15 mm
Length: 15.75 mm
Fall Time: 45 ns
Rise Time: 35 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 190 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 45 ns
Typical Turn-Off Delay Time: 145 ns
Id - Continuous Drain Current: 13 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 14 S
Rds On - Drain-Source Resistance: 700 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 3 V
