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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 500 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 500 V
Collector-Emitter Saturation Voltage: 300 mV
