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Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.6 W
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 7 V
Continuous Collector Current: - 0.5 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 500 mV
