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Fall Time: 3.95 ns, 3.95 ns
Rise Time: 3.25 ns, 3.25 ns
Technology: Si
Unit Weight: 76 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 58 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.85 ns, 7.85 ns
Typical Turn-Off Delay Time: 12.1 ns, 12.1 ns
Id - Continuous Drain Current: 33 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 23 mOhms, 23 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2 V
