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STMicroelectronics STGW75H65DFB2-4 IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series

Name: STMicroelectronics STGW75H65DFB2-4 IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGW75H65DFB2-4

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Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 357 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 115 A