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Fall Time: 11 ns
Rise Time: 4.9 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 17.8 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 92 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 13 ns
Typical Turn-Off Delay Time: 34 ns
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 340 mOhms
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs th - Gate-Source Threshold Voltage: 3 V
