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Technology: SiC
Unit Weight: 4.500 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 122 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 318 W
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Id - Continuous Drain Current: 65 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 52 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
