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Technology: Si
Unit Weight: 60 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 40 W
Gain Bandwidth Product fT: 20 MHz
Emitter- Base Voltage VEBO: 5 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 450 V
Collector-Emitter Saturation Voltage: 1 V
