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Width: 5.15 mm
Height: 20.15 mm
Length: 15.75 mm
Technology: Si
Unit Weight: 6.500 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 180 W
DC Current Gain hFE Max: 65
Emitter- Base Voltage VEBO: 7 V
Continuous Collector Current: 60 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 9
Collector- Emitter Voltage VCEO Max: 250 V
Collector-Emitter Saturation Voltage: 800 mV
