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Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 100 W
DC Current Gain hFE Max: 80
Emitter- Base Voltage VEBO: 19 V
Continuous Collector Current: 12 A
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 24
Collector- Emitter Voltage VCEO Max: 500 V
Collector-Emitter Saturation Voltage: 600 mV
