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Width: 5.15 mm
Length: 6.15 mm
Fall Time: 7 ns, 25 ns
Rise Time: 6 ns, 65 ns
Technology: Si
Unit Weight: 187 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 54 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 104 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 17 ns, 50 ns
Typical Turn-Off Delay Time: 55 ns, 65 ns
Id - Continuous Drain Current: 335 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 580 uOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
