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Fall Time: 59 ns
Rise Time: 83 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 35 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 95 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 35 ns
Typical Turn-Off Delay Time: 120 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 13 S
Rds On - Drain-Source Resistance: 80 mOhms
Vds - Drain-Source Breakdown Voltage: 280 V
Vgs th - Gate-Source Threshold Voltage: 3.75 V
