Width: 1.25 mm
Height: 0.8 mm
Length: 2 mm
Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 300 at 150 mA, 10 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 75 V
Continuous Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40 at 500 mA, 10 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1 V