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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 1000 at 1 mA, 5 V
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 150 at 10 mA, 5 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 700 mV
