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Fall Time: 63 ns
Rise Time: 24 ns
Technology: SiC
Unit Weight: 6.500 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 17 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 57 W
Vgs - Gate-Source Voltage: - 6 V, + 22 V
Typical Turn-On Delay Time: 19 ns
Typical Turn-Off Delay Time: 41 ns
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 600 mS
Rds On - Drain-Source Resistance: 975 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
