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Width: 1.6 mm
Height: 0.85 mm
Length: 2.9 mm
Fall Time: 12 ns
Rise Time: 15 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 21 V, + 21 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 53 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
