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Width: 2.5 mm
Height: 1.5 mm
Length: 4.5 mm
Fall Time: 20 ns
Rise Time: 18 ns
Technology: Si
Unit Weight: 130.500 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel MOSFET
Qg - Gate Charge: 5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 1.5 S
Rds On - Drain-Source Resistance: 240 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
