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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
DC Current Gain hFE Max: 900 at 100 uA, 5 V
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 35 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
DC Collector/Base Gain hfe Min: 350 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 300 mV
