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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 300 at - 150 mA, - 2 V
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: - 600 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 20 at - 500 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 750 mV
