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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 560 at 100 mA, 3 V
Gain Bandwidth Product fT: 250 MHz, 200 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120 at 100 mA, 3 V
Collector- Emitter Voltage VCEO Max: 32 V
Collector-Emitter Saturation Voltage: 600 mV
