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Fall Time: 3.4 ns, 66 ns
Rise Time: 4.5 ns, 27 ns
Technology: Si
Unit Weight: 771.020 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 4.8 nC, 47 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 9.6 ns, 34 ns
Typical Turn-Off Delay Time: 25.5 ns, 186 ns
Id - Continuous Drain Current: 27 A, 80 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S, 30 S
Rds On - Drain-Source Resistance: 2.4 mOhms, 8.8 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
