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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 3W
Operating temperature: 150C
Drain to Source voltage: 30V
Continuous drain current: 14A
Current - Drain (Id) (25°C): 14A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 24nC@4.5V
On Voltage - (Vgs when Id is applied): 2.5V@10mA
On Resistance - (Rds when Id,Vgs is applied): 5mOhm@14A|10V
Input Capacitance - (Ciss when Vds is applied): 2550pF@15V
