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ROHM Semiconductor BSS670T116 MOSFETs Silicon N-CH Mosfet, 60V Drain, +--20V Gate.

Name: ROHM Semiconductor BSS670T116 MOSFETs Silicon N-CH Mosfet, 60V Drain, +--20V Gate.
Brand: ROHM Semiconductor

ModelBSS670T116

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Fall Time: 15 ns

Rise Time: 5.2 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.6 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 650 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.6 S

Rds On - Drain-Source Resistance: 680 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V