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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 110 V
Continuous Collector Current: - 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30 at - 25 mA, - 1 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 500 mV
