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Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.25 W
DC Current Gain hFE Max: 270 at 10 mA, 10 V
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 400 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 82 at 10 mA, 10 V
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 300 mV
