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Technology: Si
Unit Weight: 54.579 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 390 at 50 mA, 2 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120 at 50 mA, 2 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 300 mV
