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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 270 at - 10 mA, - 10 V
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 400 V
Continuous Collector Current: - 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 82 at - 10 mA, - 10 V
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 150 mV
