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Vgs (Max): 20V
Gate Charge (Qg): 180nC
Power consumption: 1.5|83W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 130A
Input Capacitance (Ciss): 7930pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 2.45mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
