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Width: 10 mm
Height: 4.5 mm
Length: 15 mm
Fall Time: 20 ns
Rise Time: 27 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 43 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 35 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 32 ns
Typical Turn-Off Delay Time: 95 ns
Id - Continuous Drain Current: 19 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 400 mOhms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 4 V
