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Width: 3.95 mm
Height: mm
Length: 4.9 mm
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 12 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 16 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 7 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
