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Qorvo TGF2979-SM GaN SiC HEMT 8-12GHz 25W GaN PAE 50% Gain 11dB | EMIN.CO.ID

GaN FETs
Qorvo TGF2979-SM GaN SiC HEMT 8-12GHz 25W GaN PAE 50% Gain 11dB

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Qorvo TGF2979-SM GaN SiC HEMT 8-12GHz 25W GaN PAE 50% Gain 11dB

ManufacturerQorvo(View more products from this manufacturer)

ModelTGF2979-SM

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Gain: 11 dB

Technology: GaN

Unit Weight: 123 mg

Output Power: 22 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TGF2979-SMEVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 49 W

Maximum Operating Frequency: 12 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 1.8 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 2.7 V

Vds - Drain-Source Breakdown Voltage: 32 V

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