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Qorvo QPD1016 GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr | EMIN.CO.ID

GaN FETs
Qorvo QPD1016 GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr

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Qorvo QPD1016 GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr

ManufacturerQorvo(View more products from this manufacturer)

ModelQPD1016

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Gain: 23.9 dB

Technology: GaN

Output Power: 680 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1016EVB01

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 714 W

Maximum Drain Gate Voltage: 55 V

Maximum Operating Frequency: 1.7 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 7 V to 1.5 V

Vds - Drain-Source Breakdown Voltage: 145 V

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