Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 21.8 dB
Technology: GaN
Unit Weight: 7.792 g
Output Power: 178 W
Configuration: Single Triple Drain
Mounting Style: SMD/SMT
Development Kit: QPD1013EVB01
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 67 W
Maximum Drain Gate Voltage: 65 V
Maximum Operating Frequency: 2.7 GHz
Minimum Operating Frequency: 1.2 GHz
Id - Continuous Drain Current: 1.7 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
