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Gain: 20.8 dB
Technology: GaN
Unit Weight: 4.609 g
Output Power: 40 W
Mounting Style: SMD/SMT
Development Kit: QPD1004EVB1
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27.6 W
Maximum Drain Gate Voltage: 55 V
Maximum Operating Frequency: 1.2 GHz
Minimum Operating Frequency: 30 MHz
Id - Continuous Drain Current: 3.6 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: 145 V
Vds - Drain-Source Breakdown Voltage: 50 V
