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Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Single
Qg - Gate Charge: 65 nC
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 240 A
Rds On - Drain-Source Resistance: 2.8 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 3.8 V
