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PANJIT PJQ4409P_R2_00001 MOSFETs 30V P-Channel Enhancement Mode MOSFET | EMIN.CO.ID

MOSFETs
PANJIT PJQ4409P_R2_00001 MOSFETs 30V P-Channel Enhancement Mode MOSFET

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PANJIT PJQ4409P_R2_00001 MOSFETs 30V P-Channel Enhancement Mode MOSFET

ManufacturerPANJIT(View more products from this manufacturer)

ModelPJQ4409P_R2_00001

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Technology: Si

Unit Weight: 30.495 mg

Qg - Gate Charge: 7.8 nC

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 24 A

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

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