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R1/R2: 2.14
Mounting Type: Surface Mount
Power-Maximum: 125mW
Transistor type: NPN-Prebias
Collector current: 100mA
DC electricity gain: 60@5mA@10V
Frequency-Transition: 150MHz
Resistance-Base (R1): 47kOhms
Vce Saturation (maximum): 250mV@300uA,10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 22kOhms
DC current gain (hFE) (minimum): 60@5mA,10V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
